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| inchange semiconductor product specification silicon pnp power transistors tip30/30a/30b/30c description ? ? with to-220c package ? complement to type tip29/29a/29b/29c applications ? for use in general purpose power amplifer and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit tip30 -40 TIP30A -60 tip30b -80 v cbo collector-base voltage tip30c open emitter -100 v tip30 -40 TIP30A -60 tip30b -80 v ceo collector-emitter voltage tip30c open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -1 a i cm collector current-pulse -3 a i b base current -0.4 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors tip30/30a/30b/30c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit tip30 -40 TIP30A -60 tip30b -80 v ceo(sus) collector-emitter sustaining voltage tip30c i c =-30ma; i b =0 -100 v v cesat collector-emitter saturation voltage i c =-1a ;i b =-0.125a -0.7 v v be base-emitter on voltage i c =-1a ; v ce =-4v -1.3 v tip30 v ce =-40v; v eb =0 TIP30A v ce =-60v; v eb =0 tip30b v ce =-80v; v eb =0 i ces collector cut-off current tip30c v ce =-100v; v eb =0 -0.2 ma tip30/30a v ce =-30v; i b =0 i ceo collector cut-off current tip30b/30c v ce =-60v; i b =0 -0.3 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-0.2a ; v ce =-4v 40 h fe-2 dc current gain i c =-1a ; v ce =-4v 15 75 f t transiton frequency i c =-0.2a ; v ce =-10v;f=1mhz 3 mhz thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.167 ?? /w inchange semiconductor product specification 3 silicon pnp power transistors tip30/30a/30b/30c package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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